ON TEMPERATURE-DEPENDENCE OF DC AND AC RESISTANCE OF HTSC IN NORMAL-STATE

Authors
DMITRIEV VM OFITSEROV MN PRENTSLAU NN
Citation
Vm. Dmitriev et al., ON TEMPERATURE-DEPENDENCE OF DC AND AC RESISTANCE OF HTSC IN NORMAL-STATE, Physica. B, Condensed matter, 194, 1994, pp. 1511-1512
Citations number
3
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
2
Pages
1511 - 1512
Database
ISI
SICI code
0921-4526(1994)194:<1511:OTODAA>2.0.ZU;2-5
Abstract
The value and sign of the derivative partial-derivative R/partial-deri vative T in HTSC materials in the normal state are found to depend on the measurement frequency. Being of the metallic type at dc and low fr equency, R(T) turns into the dependence of the semiconductive type and then again metallic, as the frequency increases. The phenomenon is ob served at 10(3) - 10(8) Hz on ceramic, thin film and single crystal sa mples of different HTSC materials.