Effect of oxide and W-CMP on the material properties and electromigration behaviour of layered aluminum metallisations

Authors
Heyvaert, I Van Hove, M Witvrouw, A Maex, K Saerens, A Roussel, P Bender, H
Citation
I. Heyvaert et al., Effect of oxide and W-CMP on the material properties and electromigration behaviour of layered aluminum metallisations, MICROEL ENG, 50(1-4), 2000, pp. 291-299
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
50
Issue
1-4
Year of publication
2000
Pages
291 - 299
Database
ISI
SICI code
0167-9317(200001)50:1-4<291:EOOAWO>2.0.ZU;2-W
Abstract
It has been found that chemical mechanical polishing increases the electrom igration resistance of a Ti/AlCu/Ti/TiN metal stack. (111) X-ray diffractio n polefigures indicate an increased (111) texture of AlCu deposited on a su bstrate that received at least one CMP step. This improved (111) texture ca n be attributed to a decreased roughness of the underlying oxide when chemi cal mechanical polishing is used. (C) 2000 Elsevier Science B.V. All rights reserved.