Investigation of the plasma treatment in a multistep TiN MOCVD process

The goal of this paper is a basic investigation of the plasma treatment ste p in a TiN MOCVD process in order to improve the understanding of the physi cal and chemical mechanism of this process step. The influence of the plasm a treatment time as well as other plasma parameters on resistivity, stabili ty, density and impurities was tested. Additionally, the microstructure of the TiN films deposited by alternating deposition and plasma treatment step s was investigated. It was found to be dependent on the thickness of the si ngle layers. (C) 2000 Elsevier Science B.V. All rights reserved.