The goal of this paper is a basic investigation of the plasma treatment ste
p in a TiN MOCVD process in order to improve the understanding of the physi
cal and chemical mechanism of this process step. The influence of the plasm
a treatment time as well as other plasma parameters on resistivity, stabili
ty, density and impurities was tested. Additionally, the microstructure of
the TiN films deposited by alternating deposition and plasma treatment step
s was investigated. It was found to be dependent on the thickness of the si
ngle layers. (C) 2000 Elsevier Science B.V. All rights reserved.