The stacked elemental layer (SEL) technique has been used to deposit thin f
ilms of CdTe, CdSe and CdSeTe. The deposited films are then annealed in air
at various temperatures in the range 50-150 degrees C for 60 minutes. The
resultant films are then studied for their optoelectrical and structural pr
operties in order to find the optimum conditions for their use in the field
of photovoltaics. It is found that resulting films possess low values of r
esistivity and the optical band gap lies in the range suitable for photovol
taic use. Structural analysis indicates that films of CdSe and CdSeTe are a
mixture of cubic and hexagonal phases whereas CdTe tends to crystallize in
hexagonal structure.