The Silicon Drift Detectors ( SDDs) provide, through the measurement of the
drift time of the charge deposited Ly the particle which crosses the detec
tor, information on the impact point and on the energy deposition. The fore
seen readout scheme is based on a single chip implementation of art integra
ted circuit that includes ion-noise amplification, fast analog storage and
analog to digital conversion, thus avoiding the problems related to the ana
log signal transmission. A multievent buffer that reduces the transmission
bandwidth and a data compression/zero suppression unit complete the archite
cture.
In this paper the system components design is described, together with the
results of the first prototypes.