New mechanism for dislocation blocking in strained layer epitaxial growth

Citation
Ea. Stach et al., New mechanism for dislocation blocking in strained layer epitaxial growth, PHYS REV L, 84(5), 2000, pp. 947-950
Citations number
20
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
5
Year of publication
2000
Pages
947 - 950
Database
ISI
SICI code
0031-9007(20000131)84:5<947:NMFDBI>2.0.ZU;2-4
Abstract
Dislocation interactions play a critical role in plasticity and heteroepita xial strain relaxation. We use real time transmission electron microscopy o bservations of the interaction between threading and misfit dislocations in SiGe heterostructures to investigate interactions quantitatively. In addit ion to the expected long-range blocking of threading segments, we observe a new short-range mechanism which is significantly more effective. Simulatio ns show that this reactive blocking occurs when two dislocations with the s ame Burgers vector reconnect.