Modification of semiconductors with proton beams. A review

Analysis is given of the progress in the modification of semiconductors by proton beams in fields such as proton-enhanced diffusion, ion-beam mixing, and formation of porous layers. This method of modification (doping) is sho wn to have high potential in monitoring the properties of semiconductor mat erials and designing devices of micro and nano electronics as compared to t he conventional doping techniques such as thermal diffusion, epitaxy, and i on implantation. (C) 2000 MAIK "Nauka/Interperiodica".