Electrical properties of InP irradiated with fast neutrons in a nuclear reactor

Electrical properties of single-crystal InP samples with various initial co ncentrations of charge carriers were studied in relation to the dose of irr adiation with fast reactor neutrons and subsequent heat treatments in the t emperature range of 20-900 degrees C. It is shown that the behavior electri cal properties depends on the doping level of the starting material and tha t the heat treatment in the aforementioned range of temperatures results in a complete elimination of radiation defects, which makes it possible to ap ply the method of nuclear-transmutation doping to InP samples. The contribu tion of nuclear reaction initiated by intermediate-energy neutrons to the t otal level of nuclear-transmutation doping amounts to about 10%. (C) 2000 M AIK "Nauka/Interperiodica".