Electrical properties of transmutation-doped indium phosphide

Authors
Kolin, NG Merkurisov, DI Solov'ev, SP
Citation
Ng. Kolin et al., Electrical properties of transmutation-doped indium phosphide, SEMICONDUCT, 34(2), 2000, pp. 150-154
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
2
Year of publication
2000
Pages
150 - 154
Database
ISI
SICI code
1063-7826(2000)34:2<150:EPOTIP>2.0.ZU;2-F
Abstract
Experimental results of studying the process of transmutation doping of InP single crystals by irradiating with nuclear-reactor neutrons are reported; the possibility of doping with tin in a wide range of concentrations and o btaining the concentration of free electrons as high as 2 x 10(19) cm(-3) i s demonstrated. Electrical properties of InP and their behavior under irrad iation and in the course of subsequent heat treatments were studied. The pr ospects for utilization of the nuclear-transmutation method for doping are assessed. (C) 2000 MAIK "Nauka/Interperiodica".