A report is presented on the investigation of the influence of in situ anne
aling of the InGaAs layer in p-n InGaAs/GaAs structures grown by the metall
oorganic chemical vapor deposition upon the formation of coherently straine
d three-dimensional islands. The structures were studied by the methods of
capacitance-voltage measurements, deep-level transient spectroscopy, transm
ission electron microscopy, and photoluminescence. It is established that t
hree-dimensional islands with misfit dislocations are formed in the unannea
led structure A, while quantum dots are formed in the annealed structure B.
The deep-level defects were investigated. In structure A, defects of vario
us types (EL2, EL3 (I3), I2, HL3, HS2, and H5) are present in the electron-
accumulation layer. Concentrations of these traps are comparable to the sha
llow donor concentration, and the number of hole traps is higher than that
of the electron traps. On the in situ annealing, the EL2 and EL3 defects, w
hich are related to the formation of dislocations, disappear, and concentra
tions of the other defects decrease by an order of magnitude or more. For s
tructure A, it is established that the population of the quantum states in
the islands is controlled by the deep-level defects. In structure B, the ef
fect of the Coulomb interaction of the charge carriers localized in the qua
ntum dot with the ionized defects is observed. (C) 2000 MAIK "Nauka/Interpe
riodica".