Scanning tunneling microscopy of films of amorphous carbon doped with copper

Citation
Ao. Golubok et al., Scanning tunneling microscopy of films of amorphous carbon doped with copper, SEMICONDUCT, 34(2), 2000, pp. 217-220
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
2
Year of publication
2000
Pages
217 - 220
Database
ISI
SICI code
1063-7826(2000)34:2<217:STMOFO>2.0.ZU;2-G
Abstract
The results of experimental studies of the copper-doped hydrogenated amorph ous carbon films by scanning tunneling microscopy and spectroscopy are repo rted. These results are indicative of the effect of spatial ordering of nan ostructures in thin films based on carbon and copper. Geometric parameters of nanostructures were measured. In the context of the Simmons model, the w ork function was estimated to be equal to phi similar to 0.05 eV. Oscillati ons in differential conductance with a period in a voltage of Delta V = 200 -400 mV were detected in tunneling contacts of Ir with the films. The origi n of the observed oscillations is discussed. (C) 2000 MAIK "Nauka/Interperi odica".