Ultrafast electron drift velocity overshoot in 3C-SiC

A theoretical study on the ultrafast high-field transport transient propert ies of electrons in 3C-SiC is performed within a parabolic and a nonparabol ic band scheme. In both cases, the transient regime before the electron ene rgy and drift velocity attain their steady-state is shown to be shorter tha n 0.2 ps. When the applied electric held intensity is higher than 300 kV/cm , an overshoot always occurs in the electron drift velocity, which is more pronounced when band nonparabolicity is considered. (C) 2000 Elsevier Scien ce Ltd. All rights reserved.