Characterization of rapid thermal oxidation of AlAs on GaAs/AlGaAs structure

We report on the oxidation of the AlAs epitaxial layer on a GaAs/AlGaAs dou ble-quantum-well laser structure using a one-step rapid thermal process. Ox idation of the AlAs layer was carried out under oxygen-rich conditions in t he temperature range 600-800 degrees C using a rapid thermal processor. Ene rgy dispersive x-ray and Raman spectroscopy measurements were performed on the oxidized samples to study the composition of the AlAs layer after proce ssing. It was found that oxidation of the AlAs layer was due to the strong preferential oxidation of aluminium compared to arsenic. From the atomic fo rce microscopy measurements, the film was found to be of good uniformity, C opyright (C) 2000 John Wiley & Sons, Ltd.