The use of a scanning tunneling microscope (STM) for investigation of local photoconductivity of quantum-dimensional semiconductor structures

Citation
Vy. Aleshkin et al., The use of a scanning tunneling microscope (STM) for investigation of local photoconductivity of quantum-dimensional semiconductor structures, TECH PHYS L, 26(1), 2000, pp. 1-3
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
1
Year of publication
2000
Pages
1 - 3
Database
ISI
SICI code
1063-7850(2000)26:1<1:TUOAST>2.0.ZU;2-Y
Abstract
The possibility is demonstrated of using the STM for recording spectra of p hotoconductivity of quantum-dimensional semiconductor structures with a hig h spatial resolution. Studies are made into the local photoconductivity of GaAs/InxGa1-xAs based quantum wells and quantum points as a function of the depth of location of the quantum-dimensional structure relative to the sur face space charge region. For quantum points in the vicinity of the sample surface, spectra are obtained which are characterized by features associate d with the individual energy spectrum of those points. (C) 2000 MAIK "Nauka /Interperiodica".