Visualization of the ion projected range region in GaAs irradiated with argon ions

Authors
Busov, VM Venus, GB Gusinskii, GM Il'inskaya, ND Naidenov, VO Pasternak, AA Portnoi, EL Troshkov, SI
Citation
Vm. Busov et al., Visualization of the ion projected range region in GaAs irradiated with argon ions, TECH PHYS L, 26(1), 2000, pp. 75-76
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
1
Year of publication
2000
Pages
75 - 76
Database
ISI
SICI code
1063-7850(2000)26:1<75:VOTIPR>2.0.ZU;2-Q
Abstract
Cleavages of GaAs samples irradiated with 2.1, 4.6, and 8.4 MeV Ar+ ions we re studied by scanning electron microscopy (SEM). SEM visualization of the ion projected range region was used to determine the range of Ar+ projectil es in the semiconductor target. (C) 2000 MAIK "Nauka/Interperiodica".