STM studies of silicon nitride films grown on Si(111) by exposing to NH3

Authors
Zhai, GJ Yang, JS Nelson, C Wang, XS
Citation
Gj. Zhai et al., STM studies of silicon nitride films grown on Si(111) by exposing to NH3, ACT PHY C E, 49(2), 2000, pp. 215-219
Citations number
15
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
49
Issue
2
Year of publication
2000
Pages
215 - 219
Database
ISI
SICI code
1000-3290(200002)49:2<215:SSOSNF>2.0.ZU;2-U
Abstract
The morphology and surface structures of silicon nitride films grown on Si( 111) by exposing to ammonia at high temperature have been systematically st udied using scanning tunneling microscopy. The results showed that flat bet a-Si3N4 crystalline films could be obtained at a nitridation temperature of 1075-1275 K. A (4 x 4) reconstruction of beta-Si3N4 (0001) was observed on the nitride film.