The Hall effect in Ni0.8Co0.2-SiO2 granular film

The Hall effect in Ni0.8Co0.2-SiO2 granular films which were fabricated by ion beam sputtering technique was studied. The saturated Hall resistivity r eached 6.3 mu Omega. cm in an applied field of 9.5 X 10(5) A/m at room temp erature when the NiCo volume fraction x is near the metal-insulator transit ion threshold. The temperature dependence of resistivity iii these samples with different NiCo compositions was also investigated. It showed - IgT dep endence in low x samples, which gradually showed metallic as x increased. T ransmission electron microscopy and vibrating sample magnetometer were used to study the microstructures and magnetic properties, the dependence of tr ansport properties on microstructure was also discussed.