Diffuse x-ray streaks from stacking faults in Si analyzed by atomistic simulations

Since extrinsic stacking faults can form during postimplantation annealing of Si, understanding their properties is important for reliable control of semiconductor manufacturing processes. We demonstrate how grazing incidence x-ray scattering methods can be used as a nondestructive means for detecti ng extrinsic stacking faults in Si. Atomistic analysis of diffuse intensity streaks is used to determine the size of the faults, the minimum size at w hich the streak pattern in the scattering will be visible, and the magnitud e of atomic displacements in the center of the stacking fault. (C) 2000 Ame rican Institute of Physics. [S0003-6951(00)02907-7].