Lateral electric-field effects on excitonic photoemissions in InGaAs quantum disks

Electric-field effects on excitons in zero-dimensional InGaAs quantum disks have been examined at low temperature. Photoluminescence from a single iso lated disk was measured under the application of a lateral electric field b y using the microphotoluminescence technique. A redshift of sharp excitonic luminescence and a decrease in its intensity under increasing electric fie ld were observed. These were found to distinctively depend on the lateral e xtent of the disks: these were much more prominent in the larger disk. The exciton luminescence was found to be highly polarized along the direction o f the field in the larger disk. (C) 2000 American Institute of Physics. [S0 003-6951(00)00207-2].