Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

We studied the photoluminescence spectra of rapid-thermal-annealed self-ass embled InAs quantum dots at 10 K. For annealing temperatures ranging from 7 00 to 950 degrees C, we observed a blueshift in the interband transition en ergies, a decrease in the intersublevel spacing energies, and a narrowing o f photoluminescence linewidths. In this letter, we demonstrate that the tun ing of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing e nergies is found to be linear, with a slope close to the ratio of the dots' height to their diameter. (C) 2000 American Institute of Physics. [S0003- 6951(00)00406-X].