Selective nucleation and growth of carbon nanotubes at the CoSi2/Si interface

Authors
Biro, LP Molnar, G Szabo, I Vertesy, Z Horvath, ZE Gyulai, J Konya, Z Piedigrosso, P Fonseca, A Nagy, JB Thiry, PA
Citation
Lp. Biro et al., Selective nucleation and growth of carbon nanotubes at the CoSi2/Si interface, APPL PHYS L, 76(6), 2000, pp. 706-708
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
6
Year of publication
2000
Pages
706 - 708
Database
ISI
SICI code
0003-6951(20000207)76:6<706:SNAGOC>2.0.ZU;2-J
Abstract
A patterned CoSi2/Si substrate was used for the catalytic growth of carbon nanostructures and nanotubes in the temperature range of 750-800 degrees C, using acetylene/N-2 as a reaction mixture flowing through a quartz tube at ambient pressure. Selective nucleation confined to the CoSi2/Si interface region was achieved. Scanning electron microscopy and transmission electron microscopy were used to investigate the grown nanostructures. (C) 2000 Ame rican Institute of Physics. [S0003-6951(00)02006-4].