Homoepitaxial diamond layers grown by chemical-vapor deposition in the pres
ence of H2S, which were published to exhibit n-type conductivity, are caref
ully analyzed both electrically and structurally. Hall-effect measurements
as a function of temperature clearly show the samples to exhibit p-type con
duction, with an activation energy, carrier concentrations, and mobilities
which very much resemble those of B-doped p-type diamond. Secondary-ion-mas
s spectroscopy confirms that indeed the samples, previously claimed to be n
type due to a donor state attributed to sulfur, contain enough unintention
al boron to explain the observed p-type features. (C) 2000 American Institu
te of Physics. [S0003-6951(00)04606-4].