Electro-optic measurements of the ferroelectric-paraelectric boundary in Ba1-xSrxTiO3 materials chips

Authors
Li, JW Duewer, F Gao, C Chang, HY Xiang, XD Lu, YL
Citation
Jw. Li et al., Electro-optic measurements of the ferroelectric-paraelectric boundary in Ba1-xSrxTiO3 materials chips, APPL PHYS L, 76(6), 2000, pp. 769-771
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
6
Year of publication
2000
Pages
769 - 771
Database
ISI
SICI code
0003-6951(20000207)76:6<769:EMOTFB>2.0.ZU;2-B
Abstract
The combinatorial material chip strategy is used to study the ferroelectric -paraelectric phase boundary of the Ba1-xSrxTiO3 thin film system. The elec tro-optic (EO) effect at different compositions is measured using a modifie d direct-current/alternating-current birefringence EO measurement technique . We find that Ba1-xSrxTiO3 thin films exhibit relaxor like behavior with d iffused ferroelectric domains existing well past the previously defined fer roelectric-paraelectric boundary (x > 0.3). (C) 2000 American Institute of Physics. [S0003-6951(00)01006-8].