Schottky barrier effects in the photocurrent of sol-gel derived lead zirconate titanate thin film capacitors

Citation
Ys. Yang et al., Schottky barrier effects in the photocurrent of sol-gel derived lead zirconate titanate thin film capacitors, APPL PHYS L, 76(6), 2000, pp. 774-776
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
6
Year of publication
2000
Pages
774 - 776
Database
ISI
SICI code
0003-6951(20000207)76:6<774:SBEITP>2.0.ZU;2-J
Abstract
We studied the photoresponse of Pb(Zr0.53Ti0.47)O-3 (PZT) thin films by mea suring the current-voltage (I-V) curve at several ferroelectric polarizatio n states illuminated by a monochromatic 3.5 eV UV light. The photocurrent i n Pt/PZT/Pt capacitors was sensitive to the polarization state, and the pol ing voltage-dependent photocurrent showed very asymmetric hysteresis behavi or. The capacitance that is dependent upon the thickness of the samples was first measured. Then, the capacitance of the interfacial layer at a state with no interdiffusion between Pt and PZT film was extrapolated by using an equivalent circuit model. The result of the extrapolation was 28.1 mu F/cm (2). (C) 2000 American Institute of Physics. [S0003-6951(00)03306-4].