Parallel nanolithography in carbon layers with conductive imprint stamps

Citation
T. Muhl et al., Parallel nanolithography in carbon layers with conductive imprint stamps, APPL PHYS L, 76(6), 2000, pp. 786-788
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
6
Year of publication
2000
Pages
786 - 788
Database
ISI
SICI code
0003-6951(20000207)76:6<786:PNICLW>2.0.ZU;2-J
Abstract
Nanometer-scale lithography in amorphous carbon layers was carried out by l ocally oxidizing the carbon under the tip of a scanning probe microscope. A lthough this patterning technique is able to yield very small structures, i ts speed is severely limited due to the serial character of the writing pro cess. We exploit the potential of local carbon oxidation to give a parallel lithography approach which uses prepatterned stamps for electron-induced p arallel structuring of the carbon film. This technique allows the transfer of complex, three-dimensional patterns into a carbon resist layer within a single process step. (C) 2000 American Institute of Physics. [S0003-6951(00 )02206-3].