FABRICATION OF 45 DEGREES TEMPLATE GRAIN-BOUNDARY JUNCTIONS USING A CAO LIFT-OFF TECHNIQUE

Citation
Rpj. Ijsselsteijn et al., FABRICATION OF 45 DEGREES TEMPLATE GRAIN-BOUNDARY JUNCTIONS USING A CAO LIFT-OFF TECHNIQUE, Physica. B, Condensed matter, 194, 1994, pp. 1665-1666
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
2
Pages
1665 - 1666
Database
ISI
SICI code
0921-4526(1994)194:<1665:FO4DTG>2.0.ZU;2-T
Abstract
45 degrees grain boundary junctions have been made using (100) MgO sub strates, a CeO2 template layer and an YBaCu3O7 top layer. To minimize the damage to the MgO surface, which will occur if the CeO2 is structu red using ion milling, the CeO2 layer has been structured using the Ca O lift-off technique. Electrical measurements of these junctions as a function of temperature, microwave irradiation and magnetic field will be discussed in this paper.