NORMAL ELECTRON-TUNNELING IN RAMP-TYPE YBCO-JUNCTIONS PREPARED BY LASER-ABLATION

Citation
T. Becherer et al., NORMAL ELECTRON-TUNNELING IN RAMP-TYPE YBCO-JUNCTIONS PREPARED BY LASER-ABLATION, Physica. B, Condensed matter, 194, 1994, pp. 1673-1674
Citations number
3
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
2
Pages
1673 - 1674
Database
ISI
SICI code
0921-4526(1994)194:<1673:NEIRYP>2.0.ZU;2-#
Abstract
Ramp-type YBa2Cu3O7/insulator/YBa2Cu3O7 junctions have been prepared b y laser ablation. The dependence of the differential conductance on th e voltage is measured at different temperatures and magnetic fields. T he junctions are thermally stable and can be cooled down to liquid hel ium temperature and warmed up again to room temperature several times without quality loss. At temperatures below 35 K they show clear indic ations of an energy gap and in the same temperature range a very sharp zero-bias conductance peak.