Neo-pentoxide precursors for MOCVD thin films of TiO2 and ZrO2

Two group IV precursors, titanium(IV) neo-pentoxide, [Ti(mu-ONep)(ONep)(3)] (2) (1, where ONep = OCH2C(CH3)(3)), and zirconium(IV) neo-pentoxide, [Zr(m u-ONep)(ONep)(3)](2) (2), were found to possess relatively high volatility at low temperatures. These compounds were therefore investigated as metal-o rganic CVD (MOCVD) precursors using a lamp-heated cold-wall CVD reactor by direct vaporization without a carrier gas. The ONep derivatives proved to b e competitive precursors for the production of thin films of the appropriat e MO2 (M = Ti or Zr) materials in comparison to other metallo-organic precu rsors. Compound 1 was found to vaporize at 120 degrees C with a deposition rate of similar to 0.350 mu m/min onto a substrate at 330 degrees C forming the anatase phase with <1 % residual C found in the final film. Compound 2 was found to vaporize at 160 degrees C and deposited a crystalline materia l at 300 degrees C with <1% residual C found in the final film. A compariso n with standard alkoxide and beta-diketonates is presented where appropriat e.