We have studied the tunneling characteristics of Gd and Al substituted
YBa2Cu3O7-delta single crystals with T(c)=90 K and 80 K respectively.
The high-T(c) superconductors were etched 30 min in a 1% Br solution
in methanol and the tunnel barriers were formed by exposing the crysta
ls to the ambient atmosphere for about 30 min. Pb film counterelectrod
es were thermally evaporated through a metallic mask. No relevant diff
erences have been found in the differential resistance vs voltage of u
ndoped 90 K and Gd junctions, so confirming that Gd is substituting fo
r Y. A different behavior has been found in the Al doped junctions tha
t show smeared structures of reduced amplitude.