Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality

Citation
Rs. Naik et al., Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality, IEEE ULTRAS, 47(1), 2000, pp. 292-296
Citations number
32
Categorie Soggetti
Optics & Acoustics
Journal title
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
ISSN journal
08853010 → ACNP
Volume
47
Issue
1
Year of publication
2000
Pages
292 - 296
Database
ISI
SICI code
0885-3010(200001)47:1<292:MOTBCE>2.0.ZU;2-#
Abstract
Piezoelectric thin film AIN has great potential for on-chip devices such as thin-film resonator (TFR)based bandpass filters. The AIN electromechanical coupling constant, K-2, is an important material parameter that determines the maximum possible bandwidth for bandpass filters. Using a previously pu blished extraction technique, the bulk c-axis electromechanical coupling co nstant was measured as a function of the AIN x-ray diffraction rocking curv e [full width at half maximum (FWHM)]. For FWHM values of less than approxi mately 4 degrees, K-2 saturates at approximately 6.5%, equivalent to the va lue for epitaxial A1N, For FWHM values >40 degrees K-2 gradually decreases to approximately 2.5% at a FWHM of 7.5 degrees. These results indicate that the maximum possible bandwidth for TFR-based bandpass filters using polycr ystalline AIN is approximately 80 IL MHz and that, for 60-MHz bandwidth PCS applications, an AIN firm quality of >5.5 degrees FWHM is required.