Localized valence spectroscopy of complex nanostructures

Citation
A. Howie et al., Localized valence spectroscopy of complex nanostructures, J ELEC MICR, 48(6), 1999, pp. 673-679
Citations number
31
Categorie Soggetti
Multidisciplinary
Journal title
JOURNAL OF ELECTRON MICROSCOPY
ISSN journal
00220744 → ACNP
Volume
48
Issue
6
Year of publication
1999
Pages
673 - 679
Database
ISI
SICI code
0022-0744(1999)48:6<673:LVSOCN>2.0.ZU;2-Q
Abstract
STEM valence loss spectra have an energy resolution of about 0.2 eV and a s patial resolution of about 1 nm. With developments of inhomogeneous dielect ric excitation theory, detailed spectral interpretation is now becoming pos sible in the complex geometry of typical nanostructures. A non-relativistic , numerical approach based on the boundary charge method is outlined. This method gives useful results in good agreement with experiment for 90 degree s wedges and truncated slabs. It appears that these results form a convenie nt basis for the interpretation of loss spectra from more complex shapes su ch as the T or I junctions arising when two dielectrics form an interface i n a thin film. The numerical boundary method can be extended to the relativ istic case to include retardation and radiation. Such computations of the r adiation emitted by excited nanostructures are potentially useful for optic al emission spectroscopy in the STM and NSOM as well as in the STEM.