Effect of a magnetic field on thermally stimulated ionization of impurity centers in semiconductors by submillimeter radiation

The probability of electron tunneling from a bound state into a free state in crossed ac electric and dc magnetic fields is calculated in the quasicla ssical approximation. It is shown that a magnetic field decreases the elect ron tunneling probability. This decreases the probability of thermally acti vated ionization of deep impurity centers by submillimeter radiation. The l ogarithm of the ionization probability is a linear function of the squared amplitude of the electric field and increases rapidly with the frequency of the electric field. (C) 2000 MAIK "Nauka/Interperiodica".