Magnetic tunnel junctions prepared by ultraviolet light assisted oxidation

Authors
Rottlander, P Kohlstedt, H de Gronckel, HAM Girgis, E Schelten, J Grunberg, P
Citation
P. Rottlander et al., Magnetic tunnel junctions prepared by ultraviolet light assisted oxidation, J MAGN MAGN, 210(1-3), 2000, pp. 251-256
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
210
Issue
1-3
Year of publication
2000
Pages
251 - 256
Database
ISI
SICI code
0304-8853(200002)210:1-3<251:MTJPBU>2.0.ZU;2-B
Abstract
Ultraviolet light assisted oxidation has been applied for the first time to oxidize the barriers in ferromagnetic tunnel junctions. It is shown that t his method produces junctions of good quality with an area resistance of th e order of 1 k Omega mu m(2) which is very attractive as the key device for future magneto random access memories. (C) 2000 Elsevier Science B.V. All rights reserved.