We study the in-plane magnetization process in 200 Angstrom Fe(0 0 1) thin
films grown by sputtering at normal incidence. In spite of this growth geom
etry, a small uniaxial in plane magnetic anisotropy, whose origin is not to
tally understood, is found superimposed to the expected cubic biaxial one.
This has a dramatic effect both on the reversal process and the domain stru
cture. A combined longitudinal and transversal Kerr study shows the differe
nt switching processes (180 degrees walls along the main easy axis versus 9
0 degrees along the secondary easy axis) depending on the relative orientat
ion of the magnetic held with respect to the Fe crystallographic axes. Rema
rkably, this two- and sometimes three-step switching process appears only w
hen the field is applied along certain crystallographic directions. These f
indings are corroborated by domain observations. (C) 2000 Elsevier Science
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