Crystallization kinetics of bulk amorphous Se-Te-Sn system

In the present work crystallization kinetics of the amorphous Se80-xTe20Snx (0 less than or equal to x less than or equal to 9) system have been inves tigated using Differential Scanning Calorimetry. From the heating rate depe ndence of the glass transition temperature and the crystallization temperat ure the activation energy for the glass transition and that for crystalliza tion have been determined using the Kissingers equation and Matusitas equat ion for non-isothermal crystallization of materials. The effect of addition of Sn to the Se-Te system on the dimentionality of crystal growth has been investigated. An increase in the glass transition temperature with increas e in Sn content suggests that Sn plays a role in cross-linking the already existing Se-Te chains which causes an increase in the thermal stability of the material. (C) 2000 Kluwer Academic Publishers.