Density functional study of structural and electronic properties of silaneadsorbed Si(100) surface

Citation
Js. Lin et al., Density functional study of structural and electronic properties of silaneadsorbed Si(100) surface, J MOL ST-TH, 496, 2000, pp. 163-173
Citations number
38
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM
ISSN journal
01661280 → ACNP
Volume
496
Year of publication
2000
Pages
163 - 173
Database
ISI
SICI code
0166-1280(20000107)496:<163:DFSOSA>2.0.ZU;2-0
Abstract
Ab initio total energy calculations based on a norm-conserving optimized ps eudopotential and density functional theory with a generalized gradient app roximation (GGA) have been used to study the structures and energetics in c onnection with Si(100) surface and the silane (SiH4) adsorbed Si(100) surfa ce. The electronic properties, i.e. layer-resolved density of state and ato mic-resolved density of state, of Si(100)-(2 x 2) surface and Si(100)-(2 x 2) (SiH3:H) surface have been calculated. The surface electronic states ari sing from the buckled Si=Si dimer are characterized to illustrate the bondi ng nature of Si(100)-(2 X 2) and Si(100)-(2 x 2) (SiH3:H). (C) 2000 Elsevie r Science B.V. All rights reserved.