Js. Lin et al., Density functional study of structural and electronic properties of silaneadsorbed Si(100) surface, J MOL ST-TH, 496, 2000, pp. 163-173
Ab initio total energy calculations based on a norm-conserving optimized ps
eudopotential and density functional theory with a generalized gradient app
roximation (GGA) have been used to study the structures and energetics in c
onnection with Si(100) surface and the silane (SiH4) adsorbed Si(100) surfa
ce. The electronic properties, i.e. layer-resolved density of state and ato
mic-resolved density of state, of Si(100)-(2 x 2) surface and Si(100)-(2 x
2) (SiH3:H) surface have been calculated. The surface electronic states ari
sing from the buckled Si=Si dimer are characterized to illustrate the bondi
ng nature of Si(100)-(2 X 2) and Si(100)-(2 x 2) (SiH3:H). (C) 2000 Elsevie
r Science B.V. All rights reserved.