PHOTOLUMINESCENCE STUDIES OF THERMAL IMPURITY DIFFUSED POROUS SILICONLAYERS

Authors
SUNDARAM KB ALI SA PEALE RE MCCLINTIC WA
Citation
Kb. Sundaram et al., PHOTOLUMINESCENCE STUDIES OF THERMAL IMPURITY DIFFUSED POROUS SILICONLAYERS, Journal of materials science. Materials in electronics, 8(3), 1997, pp. 163-169
Citations number
30
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
8
Issue
3
Year of publication
1997
Pages
163 - 169
Database
ISI
SICI code
0957-4522(1997)8:3<163:PSOTID>2.0.ZU;2-N
Abstract
Porous silicon layers were formed on diffused layers. Both boron and p hosphorus impurities were thermally diffused using solid sources in n- Si, p-Si, n-epi/Si and p-epi/Si substrates of various resistivities. P orous silicon on these layers was formed by electrochemical and chemic al etching under various etching conditions. Strong visible luminescen ce was observed from these porous silicon structures. Infrared absorpt ion studies indicated that surface molecule identities are immaterial to the enhancement or degradation of photoluminescence.