GROWTH OF COPPER THIN-FILMS ON SPUTTERED-TIN SURFACES BY METALLORGANIC CHEMICAL-VAPOR-DEPOSITION FROM (HFAC)CU-(I)(VTMS)

Copper (Cu) films were deposited on sputtered TiN with metallorganic c hemical vapour deposition (MOCVD) from (hexafluoroacetylacetonate) Cu- (I) (vinyltrimethylsilane) [(hfac)Cu-(I)(VTMS)] at substrate temperatu res of 100-300 degrees C, total pressures of 10-2000 mtorr (1-300 Pa) and bubbler temperature of 50 degrees C with Ar carrier gas. Cu was de posited in the form of discontinuous islands up to the film thickness of about 100 nm on the TiN substrate. The orientation of growing films was changed from random orientation to [111] with increasing depositi on time and temperature. Increasing temperature increased the surface roughness of the film, and grain coalescence. Resistivity was increase d due to the carbon incorporation from the thermal decomposition of Cu precursor.