High power broad-area diode laser at 794 nm injected by an external cavitylaser

The output of a single-mode laser diode mounted in an external cavity has b een injected in a 500 mW broad-area diode laser. A maximum of 120 mW single -mode emission at 794 nm has been obtained for an injected power of 2.6 mW. Almost 90% of the total output could be produced in a diffraction limited single spatial Gaussian lobe. The spectral properties of the master laser h ave been transferred to the slave to within 1.5 kHz. We present a study of the injection efficiency under variation of various physical and geometrica l parameters while the master laser is held at a fixed frequency to within 10 MHz. In particular, in the course of variation of slave temperature and injection angle we observe strong resonance behaviour. (C) 2000 Published b y Elsevier Science B.V. All rights reserved.