A series of PrBa2Cu3-xZnxO7-y samples with 0 less than or equal to x less t
han or equal to 1.0 has been prepared. X-ray powder diffraction results sho
w the presence of a single-phase orthorhombic structure for all the studied
samples. The electrical resistivity of PrBa2Cu3-xZnxO7-y samples is found
to increase with increasing Zn concentration. The results are interpreted i
n terms of hopping conductivity (both nearest-neighbor-hopping and variable
-range-hopping) for doped semiconductors.