The peculiarities of electric current in high-resistance materials, such as
semiconductors or semimetals, irradiated by ion beams are considered. It i
s shown that after ion-beam irradiation an unusual electric current may ari
se directed against the applied voltage. Such a negative current is a trans
ient effect appearing at the initial stage of the process. The possibility
of using this effect for studying the characteristics of irradiated materia
ls is discussed. A new method for defining the mean projected range of ions
is suggested.