A new scheme of direct beam chopping in a negative hydrogen ion source

Citation
K. Shinto et al., A new scheme of direct beam chopping in a negative hydrogen ion source, REV SCI INS, 71(2), 2000, pp. 696-697
Citations number
2
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
REVIEW OF SCIENTIFIC INSTRUMENTS
ISSN journal
00346748 → ACNP
Volume
71
Issue
2
Year of publication
2000
Part
2
Pages
696 - 697
Database
ISI
SICI code
0034-6748(200002)71:2<696:ANSODB>2.0.ZU;2-5
Abstract
Direct fast H- beam chopping in a surface-plasma-type negative hydrogen ion source has been studied at KEK. The H- beam is chopped at several MHz by m odulating the converter bias voltage of the ion source. However, in this ca se, a slow rise time of the chopped H- beam is one of the most serious prob lems for synchrotron injection. In order to make the rise time faster, a ne gative voltage was applied to the anode electrode. In the new scheme, mesh inserts were installed inside the ion extraction hole of the anode. Applyin g a retarding voltage on the meshes, the fast beam chopping was tested and the results are reported and discussed in the article. (C) 2000 American In stitute of Physics. [S0034-6748(00)61502-2].