A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces

Citation
P. Geng et al., A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces, REV SCI INS, 71(2), 2000, pp. 504-508
Citations number
14
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
REVIEW OF SCIENTIFIC INSTRUMENTS
ISSN journal
00346748 → ACNP
Volume
71
Issue
2
Year of publication
2000
Part
1
Pages
504 - 508
Database
ISI
SICI code
0034-6748(200002)71:2<504:ACUSFT>2.0.ZU;2-Z
Abstract
A compact ultrahigh vacuum (UHV) system has been built to study growth and properties of III/V semiconductor surfaces and nanostructures. The system a llows one to grow III/V semiconductor surfaces by molecular beam epitaxy (M BE) and analyze their surface by a variety of surface analysis techniques. The geometric structure is examined by scanning tunneling microscopy (STM), low-energy electron diffraction and reflection high-energy electron diffra ction. The electronic properties of the surfaces are studied by angular res olved photoemission either in the laboratory using a helium discharge lamp or at the Berlin Synchrotron Radiation Facility BESSY. In order to meet the space restriction at BESSY the system dimensions are kept very small. A de tailed description of the apparatus and the sample handling system is given . For the UHV-STM (Park Scientific Instruments, VP2) a new, versatile tip h andling mechanism has been developed. It allows the transfer of tips out of the chamber and furthermore, the in situ tip cleaning by electron annealin g. In addition, another more reliable in situ tip-preparation technique ope rating the STM in the field emission regime is described. The ability of th e system is shown by an atomically resolved STM image of the c(4x4) reconst ructed GaAs(001) surface. (C) 2000 American Institute of Physics. [S0034-67 48(00)04102-2].