Electron-stimulated oxidation of silicon carbide

Auger Electron spectroscopy was used to study electron-stimulated oxidation (ESO) of SIG. The rate of oxidation was investigated as a function of elec tron-beam exposure (on and off), primary electron-beam energy (3-6 keV), el ectron-beam current (25-500 nA) and total chamber pressure. The oxidation r ate correlated with overall chamber pressure rather than the partial pressu re of H2O, CO or CO2 alone. The rate decreased as the primary-beam voltage E-p was increased. The oxidation rate increased as the primary-beam current was increased at higher pressures (2.2 x 10(-7) Torr). Oxidation did not o ccur in the absence of the electron beam. (C) 2000 Elsevier Science B.V. Al l rights reserved.