Non-adiabatic energy dissipation during exothermic chemical reactions on me
tal surfaces occurs by creation of electron-hole pairs in the metal. The ex
cited charge carriers have been directly detected using metal-silicon (Scho
ttky) diodes with ultrathin metal films. The chemically created hot electro
ns travel ballistically through the metal film? traverse the Schottky barri
er and are detected as a chemicurrent in the diode. Three examples are pres
ented, i.e. the adsorption of atomic hydrogen on Ag and Fe and the chemisor
ption of molecular oxygen on Ag. The chemicurrent transients upon exposure
are related to the kinetics of the surface reaction. The large difference i
n the detection efficiency between Ag/Si and Fe/Si diodes is attributed to
different conditions at the metal/silicon interface. (C) 2000 Elsevier Scie
nce B.V. All rights reserved.