Crystallisation kinetics in Se80-xTe20Sbx glassy alloys

Citation
A. Singh et al., Crystallisation kinetics in Se80-xTe20Sbx glassy alloys, ADV MAT OPT, 9(3), 1999, pp. 95-106
Citations number
30
Categorie Soggetti
Material Science & Engineering
Journal title
ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS
ISSN journal
10579257 → ACNP
Volume
9
Issue
3
Year of publication
1999
Pages
95 - 106
Database
ISI
SICI code
1057-9257(199905/06)9:3<95:CKISGA>2.0.ZU;2-9
Abstract
The kinetics of crystallisation has been studied in glassy Se80-xTe20Sbx (0 less than or equal to x less than or equal to 15) by two different techniq ues: (i) a non-isothermal DSC technique where multiscans at different heati ng rates are used to calculate the kinetic parameters; (ii) isothermal anne aling at different temperatures near the crystallisation temperature and me asuring the conductivity variation with time, The activation energies obtai ned by the two techniques match reasonably well, A discontinuity in Delta E is observed at 10 at% Sb which is explained in terms of a mechanically opt imised structure at a particular composition. Copyright (C) 1999 John Wiley & Sons, Ltd.