Photoluminescence, Raman scattering, and infrared absorption spectroscopies
were employed to study the properties of a-C:H thin films deposited under
constant pressure conditions. The films examined in the present work were p
repared with and without the presence of nitrogen in the deposition process
gases. Low temperature photoluminescence spectra revealed new emission ban
ds at 564 nm and 637 nm for the nitrogen doped films. Three Raman scatterin
g lines are observed in the nitrogen doped and annealed films. The Raman sc
attering spectra of the annealed films suggest the presence of microcrystal
line graphite inclusions in the bulk of the film. Additional infrared absor
ption data support the Raman results. These observations agree with the pro
posed cluster model of a-C:H films consisting of sp(2) and sp(3) beading st
ructures. (C) 2000 Elsevier Science S.A. All rights reserved.