Calculation of intrinsic stress by creep deformation of an Si substrate onchemical vapor deposited diamond films

Diamond films were deposited on a p-type Si substrate by a hot-filament che mical vapor deposition method. We observed intrinsic stress of the film by creep deformation of the Si substrate, and deduced intrinsic residual stres ses of films using the power-law creep equation. Thermal strain and creep s train in the Si substrate were subtracted from the total ex situ measured s train. Thermal strain was removed by the numerical method, and creep strain s in the substrate were examined by measuring the curvature of Si substrate s which had been removed from the diamond films by the electron cyclotron r esonance etching process using oxygen plasma. The results showed that creep deformation of the Si substrates must be considered when residual stresses are measured by the curvature method. This is especially true in cases whe re the film was thick, or when temperature or stress conditions were high. From this study, we propose a new approach to measuring intrinsic stress fr om the creep deformation of substrates. (C) 2000 Published by Elsevier Scie nce S.A. All rights reserved.