Photoluminescence investigations of amphoteric behavior of Si-dopant in GaAs

Authors
Galiev, GB Karachevtseva, MV Mokerov, VG Strakhov, VA Yaremenko, NG
Citation
Gb. Galiev et al., Photoluminescence investigations of amphoteric behavior of Si-dopant in GaAs, DOKL AKAD N, 367(5), 1999, pp. 613-616
Citations number
6
Categorie Soggetti
Multidisciplinary
Journal title
DOKLADY AKADEMII NAUK
ISSN journal
08695652 → ACNP
Volume
367
Issue
5
Year of publication
1999
Pages
613 - 616
Database
ISI
SICI code
0869-5652(199908)367:5<613:PIOABO>2.0.ZU;2-E