Microwave noise performance of AlGaN/GaN HEMTs

Authors
Ping, AT Piner, E Redwing, J Khan, MA Adesida, I
Citation
At. Ping et al., Microwave noise performance of AlGaN/GaN HEMTs, ELECTR LETT, 36(2), 2000, pp. 175-176
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
2
Year of publication
2000
Pages
175 - 176
Database
ISI
SICI code
0013-5194(20000120)36:2<175:MNPOAH>2.0.ZU;2-4
Abstract
The authors have characterised the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating BC substrates. The minimum noise fig ure for 0.25 mu m gate-length devices was measured to be 0.77dB at 5 GHz an d 1.06dB at 10GHz. The measured minimum noise figures are comparable to tho se exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/ GaN HEMTs for low-noise applications.